photomultiplier tube R13456 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?017 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. general figure 1: typical spectral response tpmsb0261ea specifications features high sensitivity radiant at 900 nm................................... quantum efficiency at 900 nm ....................... wide spectral response .......................... pin compatible with conventional 1-1/8" side-on pmts applications 7.3 ma/w (typ.) 1 % (typ.) 185 nm to 980 nm parameter description / value unit spectral response wavelength of maximum response photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitabie socket suitabie socket assembly 185 to 980 400 multialkali 8 24 uv glass circular-cage 9 4 6 11-pin base jedec no. b11-88 approx. 45 -30 to +50 -30 to +50 e678?1a (sold separately) e717?3 (sold separately) e717?4 (sold separately) nm nm mm pf pf g c c materiai minimum effective area structure number of stages anode to last dynode anode to all other electrodes biomedical analysis blood analyzer, flow cytometer, dna sequencer environmental monitoring nox analyzer spectroscopy fluorescence spectrometer, raman spectrometer, uv?is-nir spectrometer microscopy wavelength (nm) 100 10 1 0.1 0.01 100 200 300 400 500 600 700 800 900 1000 R13456 r928 cathode radiant sensitivity quantum efficiency cathode radiant sensitivity (ma/w) quantum efficiency (%)
photomultiplier tube R13456 maximum ratings (absolute maximum values) characteristlcs (at 25 c) notes a: b: c: d: e: averaged over any interval of 30 s maximum. the light source is a tungsten filament lamp operated at a distribution tem- perature of 2856 k. supply voltage is 100 v between the cathode and all other electrodes connected together as anode. red/white ratio is the quotient of the cathode current measured using a red filter(toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as note b. the value is cathode output current when a blue filter (corning cs 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as note b. measured with the voltage distribution ratio shown in table 1 below. g: h: i: j: eni is an indication of the photon-limited signal-to-noise ratio. it refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. where q = electronic charge (1.60 10 -19 coulomb). ldb = anode dark current(after 30 min storage) in amperes. g = gain. ? f = bandwidth of the system in hertz. 1 hz is used. s = anode radiant sensitivity in amperes per watt at the wave- length of peak response. the rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. in measurement, the whole photo- cathode is illuminated. also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times. f: measured with the same supply voltage and voltage distribution ratio as note e after removal of light. eni = s 2q . ldb . g . ? f electrode k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p distribution ratio 1111111111 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode table 1:voltage distribution ratio value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. max. unit 50 % a/lm ma/w ma/w ma/w ma/w ma/w a/lm a/w a/w a/w a/w a/w na w ns ns ns 1 280 18 52 74 41 18 0.4 8 2800 1.8 10 5 5.2 10 5 7.4 10 5 4.1 10 5 1.8 10 5 1.0 10 7 5 1.7 10 -16 2.2 22 1.2 min. quantum efficiency luminous b radiant red/white ratio c blue sensitivity index d luminous e radiant anode pulse rise time h electron transit time i transit time spread (t.t.s.) j at 900 nm at 194 nm at 254 nm at 400 nm at 633 nm at 852 nm at 194 nm at 254 nm at 400 nm at 633 nm at 852 nm 0.3 140 0.3 400 parameter cathode sensitivity anode sensitivity gain e anode dark current f (after 30 min storage in darkness) eni (equivalent noise input) g time response between anode and cathode between anode and last dynode
figure 2: anode luminous sensitivity and gain characteristics figure 3: typical time response figure 4: typical temperature coefficient of anode sensitivity figure 5: typical temperature characteristic of dark current (at 1000 v, after 30 min storage in darkness) tpmsb0262ea tpmsb0004ec tpmsb0263 ea tpmsb0264ea 500 700 1000 1500 supply voltage (v) time (ns) 1 2 4 6 8 10 20 40 60 80 100 rise time transit time 500 700 1000 10 - 1 anode luminous sensitivity (a/lm) 1500 gain 10 0 10 1 10 2 10 3 10 4 10 5 10 2 10 3 10 4 10 5 10 6 10 7 10 8 supply voltage (v) typical anode sensitivity minimum anode sensitivity typical gain 300 400 500 700 200 wavelength (nm) 0 5 10 -5 -10 temperature coefficient (%/ c) 900 600 800 1000 temperature ( c) 1000 10 0.1 0.01 dark current (na) 100 1 -20 -10 0 +20 -30 +40 +10 +30 +50
tpms1102e02 jan. 2017 ip photomultiplier tube R13456 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fax: (1)908-231-12 18 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, fa x: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, tele phone: (44)1707-294888, fax: (44)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: torshamnsgatan 35 se-164 40 kista, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e -mail: info@hamamatsu.se italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39)02-93581733, fax: (39)02-93581741 e-mail: info@hamamatsu.it china: hamamatsu photonics (china) co., ltd.: b1201 jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china , telephone: (86)10-6586-6006, fax: (86)10-6586-2866 e-mail: hpc@hamamatsu.com.cn taiwan: hamamatsu photonics taiwan co., ltd.: 8f-3, no.158, section2, gongdao 5th road, east district, hsinchu, 300, taiwan r.o.c. tel ephone: (886)03-659-0080, fax: (886)07-811-7238 e-mail: info@tw.hpk.co.jp figure 6: dimensional outline and basing diagram (unit: mm) figure 8: d type socket assembly (unit: mm) figure 7: socket (unit: mm) sold separately sold separately warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. tacca0002eh tacca0277ea tpmsa0008ea tacca0064ea 33 5 49 3.5 38 29 4 18 * hamamatsu also provides c4900 series compact high voltage power supplies and c12597-01 series dp type socket assemblies which incorporate a dc to dc converter type high voltage power supply. potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 e717-63 e717-74 e678-11a 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 28.5 1.5 8 min. photocathode 24 min. 49.0 2.5 80 max. 94 max. 32.2 0.5 11 pin base jedec no. b11-88 11 bottom view (basing diagram) r1 to r10 c1 to c3 : 330 k ? : 10 nf r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal output (a) -hv (k) p k 10 gnd (g) socket pin no. 9 8 7 6 5 4 3 2 1 11 * "wiring diagram applies when -hv is supplied." to supply +hv,connect the pin "g" to+hv, and the pin "k" to the gnd. pmt 26.0 0.2 22.4 0.2 32.0 0.5 26.0 0.2 32.0 0.5 2 7 2.7 14.0 0.5 30 10 0.7 4- 2.8 housing (insulator) r13 k a g top view side view bottom view
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